2SC4215 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY FM, RF, MIX, IF AMPLIFIERAPPLICATIONS)

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4215
DESCRIPTION
·Low Noise
NF = 2 dB TYP., @ f = 100MHz
·Small Feedback Capacitance
C_re = 0.55pF TYP.
APPLICATIONS
·High frequency amplifier applications
·FM, RF ,MIX, IF amplifier applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
40
V
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current-Continuous
I_B
Base Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
30
V
4
V
20
mA
4
mA
0.1
W
125
℃
-55~125
℃
isc website：www.iscsemi.cn
1