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| 2SC4196 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4196
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
IC= 10μA ; IE= 0
25
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA
ICBO
Collector Cutoff Current
VCB= 15V; IE= 0
ICEO
Collector Cutoff Current
VCE= 15V; RBE= â
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
0.3
V
0.3 μA
10 μA
1.0 μA
hFE
DC Current Gain
IC= 5mA ; VCE= 5V
50
180
fT
Current-GainâBandwidth Product
IC= 20mA ; VCE= 5V
1.8 2.4
GHz
COB
Output Capacitance
IE= 0 ; VCB= 10V;f= 1.0MHz
0.7 1.0 pF
VOSC
Oscillating Output Voltage
IC= 5mA ; VCC= 5V;f= 930MHz
200
mV
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