2SC4196 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4196
DESCRIPTION
·Low Noise
·High Gain Bandwidth Product
APPLICATIONS
·Designed for use in UHF local oscillator.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
25
V
V_CEO Collector-Emitter Voltage
15
V
V_EBO Emitter-Base Voltage
3
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
50
mA
0.15
W
150
℃
-55~150
℃
isc website：www.iscsemi.cn
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