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| 2SC4159 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4159
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= â
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 10mA; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 300mA; VCE= 5V
fT
Current-GainâBandwidth Product
IC= 50mA; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 0.5A, RL= 40Ω,
IB1= -IB2= 50mA, VCC= -20V;
PW= 20μs
 hFE Classifications
D
E
60-120 100-200
MIN TYP. MAX UNIT
180
V
160
V
6
V
0.3
V
1.5
V
10
μA
10
μA
60
200
100
MHz
23
pF
0.15
μs
0.81
μs
0.48
μs
isc Websiteï¼www.iscsemi.cn
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