2SC4159 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4159
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V_(BR)CEO= 160V (Min)
·Large Current Capacity
·Complement to Type 2SA1606
APPLICATIONS
·Designed for high-voltage switching, AF power amplifier,
100W output predrivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
180
V
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current-Continuous
I_CM
Collector Current-Peak
Total Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
160
V
6.0
V
1.5
A
3
A
15
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn