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| 2SC4106 Datasheet, PDF (2/2 Pages) Sanyo Semicon Device – Switching Regulator Applications | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4106
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; RBE= â
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 4A; IB=B 0.8A
IC= 4A; IB=B 0.8A
VCB= 400V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 0.8A ; VCE= 5V
hFE-2
DC Gurrent Gain
IC= 4A ; VCE= 5V
hFE-3
DC Gurrent Gain
IC= 10mA ; VCE= 5V
fT
Current-GainâBandwidth Product
IC= 0.8A ; VCE= 10V
COB
Output Capacitance
Switching times
IE= 0;VCB= 10V; ftest= 1.0MHz
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 5A ;IB1= 1A; IB2= -2A
RL= 40Ω; VCC= 200V
 hFE-1 Classifications
L
M
N
15-30 20-40 30-50
MIN TYP. MAX UNIT
400
V
500
V
7
V
0.8
V
1.5
V
10 μA
10 μA
15
50
10
10
20
MHz
80
pF
0.5 μs
2.5 μs
0.3 μs
isc Websiteï¼www.iscsemi.cn
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