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| 2SC4106 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Switching Regulator Applications | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4106
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
: V(BR)CEO= 400V(Min.)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
14
A
IBB
Base Current-Continuous
3
A
Collector Power Dissipation@TC=25â
50
PC
W
Collector Power Dissipation@Ta=25â 1.75
TJ
Junction Temperature
150
â
Tstg
Storage Temperature Range
-55~150 â
isc Websiteï¼www.iscsemi.cn
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