2SC4003 Datasheet, PDF (2/3 Pages) Sanyo Semicon Device – High-Voltage Driver Applications

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4003
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 50mA; IB= 5mA
V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10uA; IC= 0
ICBO
Collector Cutoff Current
VCB= 300V; IE= 0
IEBO
Emitter Cutoff Current
VEB=4V; IC= 0
hFE
DC Current Gain
IC= 50mA; VCE= 10V
fT
Current-Gain—Bandwidth Product IC= 10mA; VCE= 30V
MIN TYP. MAX UNIT
0.6
V
1.0
V
400
V
400
V
5
V
0.1 uA
0.1 uA
60
200
70
MHz
 hFE Classifications
D
E
60-120 100-200
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