2SC4003 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – High-Voltage Driver Applications

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4003
DESCRIPTION
·High hFE
·Low collector-to-emitter saturation voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
0.2
A
PC
Collector Power Dissipation
1.0
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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