2SC3996 Datasheet, PDF (2/2 Pages) Sanyo Semicon Device – Ultrahigh-Definition Display Horizontal Deflection Output Applications

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3996
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
800
V
VCE_(sat) Collector-Emitter Saturation Voltage IC= 12A; IB=3A
VBE_(sat) Base-Emitter Saturation Voltage
IC= 12A; IB=3A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
5.0 V
1.5 V
10 μA
ICES
Collector Cutoff Current
VCE= 1500V; RBE= 0
1.0 mA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
1.0 mA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
8
40
hFE-2
DC Current Gain
IC= 12A; VCE= 5V
4
8
t_stg
Storage Time
t_f
Fall Time
IC= 12A, IB1=2.4A; IB2= -4.8A
3.0 μs
0.2 μs
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