2SC3996 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Ultrahigh-Definition Display Horizontal Deflection Output Applications

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3996
DESCRIPTION
·High Switching Speed
·High Breakdown Voltage-
: V_(BR)CBO= 1500V(Min)
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
1500
V
VCEO Collector-Emitter Voltage
800
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Pulse
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
35
A
180
W
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.cn
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