 English |
|
|
|
|
|
|
|
| 2SC3910 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – Silicon NPN Triple-Diffused Junction Mesa Type | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3910
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A ;L= 25mH
500
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 1.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8.0A; IB= 1.6A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
1.0
V
1.5
V
100 μA
100 μA
hFE-1
DC Current Gain
IC= 0.1A ; VCE= 5V
15
hFE-2
DC Current Gain
IC= 8A ; VCE= 5V
10
fT
Current-GainâBandwidth Product
IC= 0.5A;VCE= 10V;f= 0.5MHz
2
MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 8A ;IB1= 1.6A; IB2= -1.6A;
VCC= 200V
1.0 μs
3.0 μs
1.0 μs
isc Websiteï¼www.iscsemi.cn
2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese