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| 2SC3910 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Silicon NPN Triple-Diffused Junction Mesa Type | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3910
DESCRIPTION
·High Speed Switching
·High Collector-Base Breakdown Voltage-
: V(BR)CEO= 800V(Min)
·Good Linearity of hFE
APPLICATIONS
·Designed for high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
30
A
IBB
Base Current-Continuous
Collector Power Dissipation
@ TC=25â
PC
Collector Power Dissipation
@ Ta=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
5
A
150
W
3.5
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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