2SC3346 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – SILICON NPN EPITAXIAL TYPE(PCT PROCESS)

Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Collector-emitter breakdown voltage I_C=50mA ; I_B=0
V_CEsat Collector-emitter saturation voltage I_C=6A; I_B=0.3A
V_BEsat Base-emitter saturation voltage
I_C=6A; I_B=0.3A
I_CBO
Collector cut-off current
V_CB=80V ;I_E=0
I_EBO
Emitter cut-off current
V_EB=6V; I_C=0
h_FE-1
DC current gain
I_C=1A ; V_CE=1V
h_FE-2
DC current gain
I_C=6A ; V_CE=1V
f_T
Transition frequency
I_C=1A ; V_CE=5V
C_OB
Output capacitance
I_E=0 ; V_CB=10V,f=1MHz
Switching times
T_on
Turn-on time
t_stg
Storage time
t_f
Fall time
I_B1=-I_B2=0.3A;
R_L=5 ,V_CC=30V
Pw=20 s ;Duty 1%
‹ h_FE-1 classifications
O
Y
70-140
120-240
Product Specification
2SC3346
MIN TYP. MAX UNIT
80
V
0.2
0.4
V
0.9
1.2
V
10
A
10
A
70
240
40
80
MHz
220
pF
0.2
s
1.0
s
0.2
s
2