2SC3346 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – SILICON NPN EPITAXIAL TYPE(PCT PROCESS)

Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
With TO-220C package
Complement to type 2SA1329
High speed switching time
: t_stg=1.0s(Typ.)
Low collector saturation voltage
: V_CE(sat)=0.4V(Max.)@I_C=6A
APPLICATIONS
For high current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC3346
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_C
Collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
80
80
6
12
2
40
150
-55~150
UNIT
V
V
V
A
A
W