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| 2SC2707 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2707
ELECTRICAL CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
180
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
180
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 180V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3.0
V
100 μA
100 μA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
55
160
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
30
fT
Current-GainâBandwidth Product
IC= 0.5A; VCE= 12V
80
MHz
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