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| 2SC2707 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2707
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min.)
·High Power Dissipation
·Complement to Type 2SA1147
APPLICATIONS
·Designed for power switching amplifier and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
180
V
VCEO Collector-Emitter Voltage
180
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature
5
A
150
W
150
â
-65~150 â
isc Websiteï¼www.iscsemi.cn
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