2SC2655 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

isc Silicon NPN Pow Transistor
INCHANGE Semiconductor
2SC2655
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A ; IB= 50mA
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 2V
hFE-2
DC Current Gain
IC= 1.5A ; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 500mA ; VCE= 2V
MIN TYP. MAX UNIT
0.5
V
1.2
V
1
μA
70
240
40
100
MHz
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