2SC2655 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

isc Silicon NPN Pow Transistor
INCHANGE Semiconductor
2SC2655
DESCRIPTION
·Silicon NPN epitaxial type
·Low saturation voltage
·Complementary to 2SA1020
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
·Power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
50
V
VCEO Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
2
A
0.9
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.cn
1 _{isc & iscsemi is registered trademark}