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| 2SC2481 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2481
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IC= 5mA; VCE= 5V
VCB= 150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 0.2A; VCE= 5V
fT
Current-GainâBandwidth Product
IC= 0.2A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V, ftest= 1MHz
MIN TYP. MAX UNIT
150
V
1.5
V
0.8
V
1.0 μA
1.0 μA
60
320
20 100
MHz
13
pF
 hFE Classifications
R
O
Y
60-120 100-200 160-320
isc Websiteï¼www.iscsemi.cn
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