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2SC2481 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2481
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min)
·High Current Capability
·High Collector Power Dissipation
·Complement to Type 2SA1021
APPLICATIONS
·Color TV vertical deflection output applications.
·Color TV class B sound output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
1.5
A
IBB
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
1.0
A
20
W
1.2
150
℃
-55~150
℃
isc Website:www.iscsemi.cn