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| 2SC2242 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2242
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB=B 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 10mA
VBE(on) Base-Emitter On Voltage
IC= 50mA ; VCE= 10V
ICBO
Collector Cutoff Current
VCB= 240V; IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE
DC Current Gain
IC= 50mA ; VCE= 10V
COB
Output Capacitance
IE= 0 ; VCB= 50V; ftest=1MHz
fT
Current-GainâBandwidth Product
IC= 20mA ; VCE= 50V
MIN TYP. MAX UNIT
300
V
3.0
V
0.9
V
1.0 μA
1.0 μA
40
170
5.5
12
pF
20
50
MHz
isc Websiteï¼www.iscsemi.cn
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