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| 2SC2242 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2242
DESCRIPTION
·High Breakdown Voltage-
: V(BR)CBO= 300V(Min)
·High Current-GainâBandwidth Product-
: fT= 20MHz(Min)@IC= 20mA
APPLICATIONS
·Power amplifier applications
·Color TV sound output applications
·Recommended for sound output stage in line operated TV
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
150
mA
IBB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
50
mA
1.5
W
25
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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