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| 2SC2166 Datasheet, PDF (2/2 Pages) Mitsubishi Electric Semiconductor – NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2166
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA, IE= 0
V(BR)CER Collector-Emitter Breakdown Voltage IC= 10mA; RBE= 10Ω
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA, IC= 0
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE
DC Current Gain
IC= 0.1A; VCE= 10V
PO
Output Power
ηC
Collector Efficiency
VCC= 12V; Pin= 0.25W;
f= 27MHz
MIN TYP. MAX UNIT
45
V
45
V
4
V
0.1 mA
0.1 mA
35
180
6
7.5
W
55 60
%
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