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| 2SC2166 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2166
DESCRIPTION
·High Power Gain-
: Gpe⥠13.8dB @f= 27MHz, PO= 6W; VCC= 12V
·High Reliability
APPLICATIONS
·Designed for 3 to 4 watts output power amplifiers in HF band
mobile radio applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
45
V
VCER Collector-Emitter Voltage RBE= 10Ω
45
V
VEBO Emitter-Base Voltage
4
V
IC
Collector Current
Collector Power Dissipation
@TC=25â
PC
Collector Power Dissipation
@Ta=25â
Tj
Junction Temperature
4
A
12.5
W
1.5
150
â
Tstg
Storage Temperature Range
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance,Junction to Ambient 83 â/W
Rth j-c Thermal Resistance,Junction to Case
10 â/W
isc websiteï¼www.iscsemi.cn
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