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| 2SC2075 Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – SILICON NPN EPITAXIAL TYPE(PCT PROCESS) | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3 A
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1.0mA; IC=0
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
VCB=30V;IE=0
VEB=4V; IC=0
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=2V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.5A ; VCE=5V
Product Specification
2SC2075
MIN TYP. MAX UNIT
1.5
V
80
V
4
V
10
μA
10
μA
25
15
40
pF
100
MHz
2
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