2SC2075 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON NPN EPITAXIAL TYPE(PCT PROCESS)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2075
DESCRIPTION
·With TO-220 package
·High transition frequency
·Wide area of safe operation
APPLICATIONS
·27MHz power amplifier applications
·Recommended for output stage application
of AM 4W transmitter
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_E
Emitter current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
80
80
4
4
-4
10
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃