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| 2SC2026 Datasheet, PDF (2/2 Pages) NEC – NPN SILICON TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC2026
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
ICBO
Collector Cutoff Current
VCB= 15V; IE= 0
0.1 μA
IEBO
Emitter Cutoff Current
VEB= 2V; IC= 0
0.1 μA
hFE
DC Current Gain
IC= 10mA ; VCE= 10V
25
200
fT
Current-GainâBandwidth Product
IC= 10mA ; VCE= 10V
15 2.0
GHz
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1.0MHz
0.75 1.1 pF
Gpe
Power Gain
NF
Noise Figure
VCE= 10 V,IC= 10mA; f= 500MHz
VCE= 10 V,IC= 3mA; f= 500MHz;
RG= 50Ω
13 15
dB
3
4
dB
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