2SC2026 Datasheet, PDF (1/2 Pages) NEC – NPN SILICON TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC2026
DESCRIPTION
·Low Noise
NF= 3.0dB TYP. @ f= 500MHz
·High Power Gain
G_pe= 15dB TYP. @ f= 500MHz
·High Gain Bandwidth Product
f_T= 2.0GHz TYP.
APPLICATIONS
·Designed for use in low noise amplifiers in the VHF~UHF
band.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
30
V
V_CEO Collector-Emitter Voltage
14
V
V_EBO Emitter-Base Voltage
3
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
50
mA
0.25
W
150
℃
-55~150
℃
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