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| 2SC1971 Datasheet, PDF (2/2 Pages) Mitsubishi Electric Semiconductor – NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC1971
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 10mA, IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= â
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA, IC= 0
ICBO
Collector Cutoff Current
VCB= 25V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE
DC Current Gain
IC= 0.1A; VCE= 10V
PO
Output Power
ηC
Collector Efficiency
VCC= 13.5V; Pin= 0.6W;
f= 175MHz
MIN TYP. MAX UNIT
35
V
17
V
4
V
0.5 mA
0.5 mA
10
180
6
7
W
60
70
%
 hFE Classifications
X
A
B
10-25 20-45 35-70
C
D
55-110 90-180
isc Websiteï¼www.iscsemi.cn
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