2SC1971 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC1971
DESCRIPTION
·High Power Gain-
: G_pe≥ 10dB,f= 175MHz, P_O= 6W; V_CC= 13.5V
·High Reliability
APPLICATIONS
·Designed for RF power amplifiers on VHF band mobile radio
applications.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
35
V
V_CEO
Collector-Emitter Voltage R_BE= ∞
17
V
V_EBO Emitter-Base Voltage
4
V
I_C
Collector Current
Collector Power Dissipation
@T_C=25℃
P_C
Collector Power Dissipation
@T_a=25℃
T_j
Junction Temperature
2
A
12.5
W
1.5
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-a} Thermal Resistance,Junction to Ambient 83 ℃/W
R_{th j-c} Thermal Resistance,Junction to Case
10 ℃/W
isc Website：www.iscsemi.cn