2SB996 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Good Linearity of hFE

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB996
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Collector-Emitter Breakdown Voltage I_C= -30mA; I_B= 0
V_CE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
V_BE(on) Base-Emitter On Voltage
I_C= -3A; V_CE= -5V
I_CBO
Collector Cutoff Current
V_CB= -80V; I_E= 0
I_EBO
Emitter Cutoff Current
V_EB= -5V; I_C= 0
h_FE-1
DC Current Gain
I_C= -0.5A; V_CE= -5V
h_FE-2
DC Current Gain
I_C= -3A; V_CE= -5V
C_OB
Output Capacitance
f_T
Current-Gain—Bandwidth Product
I_E= 0; V_CB= -10V; f_test= 1MHz
I_C= -0.5A; V_CE= -5V
MIN TYP. MAX UNIT
-80
V
-1.7 V
-1.5 V
-30 μ A
-0.1 mA
40
240
15
130
pF
9
MHz
 h_FE-1 Classifications
R
O
Y
40-80 70-140 120-240
isc Website：www.iscsemi.cn
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