2SB996 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Good Linearity of hFE

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB996
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -80V(Min)
·Good Linearity of h_FE
·Complement to Type 2SD1356
APPLICATIONS
·Power amplifier applications.
·Recommended for 20~25W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO
Collector-Base Voltage
-80
V
V_CEO
Collector-Emitter Voltage
-80
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-4
A
I_B
Base Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature
-0.4
A
30
W
150
℃
-55~150 ℃
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