2SB1103 Datasheet, PDF (2/3 Pages) Hitachi Semiconductor – Silicon PNP Triple Diffused

Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Collector-emitter breakdown voltage IC=-25mA, RBE=
V_(BR)EBO Emitter-base breakdown voltage
I_E=-50mA, I_C=0
V_CEsat-1 Collector-emitter saturation voltage I_C=-4A ,I_B=-8mA
V_CEsat-2 Collector-emitter saturation voltage I_C=-8A ,I_B=-80mA
V_BEsat-1 Base-emitter saturation voltage
I_C=-4A ,I_B=-8mA
V_BEsat-2 Base-emitter saturation voltage
I_C=-8A ,I_B=-80mA
I_CBO
Collector cut-off current
V_CB=-60V, I_E=0
I_CEO
Collector cut-off current
V_CE=-50V, R_BE=
h_FE
DC current gain
I_C=-4A ; V_CE=-3V
V_D
Diode forward voltage
I_D=8A
Switching times
t_on
Turn-on time
t_stg
Storage time
I_C=-4A ,I_B1=-I_B2=-8mA
t_f
Fall time
Product Specification
2SB1103
MIN TYP. MAX UNIT
-60
V
-7
V
-1.5
V
-3.0
V
-2.0
V
-3.5
V
-100
A
-10
A
1000
3.0
V
0.5
s
3.0
s
1.0
s
2