2SB1103 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon PNP Triple Diffused

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1103
DESCRIPTION
With TO-220C package
DARLINGTON
High DC durrent gain
Low collector saturation voltage
Complement to type 2SD1603
APPLICATIONS
Designed for use in low frequency
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current-DC
I_CM
Collector current-peak
P_C
Collector power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
-60
-60
-7
-8
-12
40
150
-55~150
UNIT
V
V
V
A
A
W