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| 2SA795 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – SI PNP PLANAR | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA795
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A ; IB= 0
V(BR)EBO Emitter-Base Breakdown Vltage
IE= -1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -300mA; IB= -30mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -300mA; IB= -30mA
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE-1
DC Current Gain
IC= -150mA ; VCE= -10V
hFE-2
DC Current Gain
IC=-500mA ; VCE= -5V
fT
Current-GainâBandwidth Product
IC= -50mA ; VCE= -10V
COB
Output Capacitance
IE=0 ; VCB= -100V,ftest= 1MHz
 hFE-1 Classifications
P
Q
R
S
65-110 90-155 130-220 185-330
MIN TYP. MAX UNIT
-150
V
-5
V
-1.5 V
-1.5 V
-1 μA
-1 μA
65
330
50
120
MHz
15 pF
isc Websiteï¼www.iscsemi.cn
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