2SA795 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – SI PNP PLANAR

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·Large Collector Power Dissipation
·High Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -150V(Min)
·Good Linearity of h_FE
·Complement to Type 2SC1565
APPLICATIONS
·Medium Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-150
V
V_CEO
Collector-Emitter Voltage
-150
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-1
A
I_CP
Collector Current-Pulse
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
-1.5
A
10
W
150
℃
T_stg
Storage Temperature Range
-55~150
℃
isc Product Specification
2SA795
isc Website：www.iscsemi.cn