2SA779 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA779
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ; IB=0
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= -0.5A; VCE= -2V
VCB= -35V; IE= 0
VCB= -35V; IE= 0,TC=125℃
VEB= -5V; IC=0
hFE-1
DC Current Gain
IC= -5mA ; VCE= -2V
hFE-2
DC Current Gain
IC= -0.5A ; VCE= -2V
hFE-3
DC Current Gain
IC= -0.15A ; VCE= -2V
MIN TYP. MAX UNIT
-35
V
-0.5 V
-1.0 V
-0.1
-10
μA
-10 μA
25
25
40
250
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