|
2SA779 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
|
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA779
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= -0.15A
·Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= -35V(Min)
APPLICATIONS
·Designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-35
V
VCEO
Collector-Emitter Voltage
-35
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.5
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
-0.5
A
1.0
W
10
150
â
Tstg
Storage Temperature Range
-55~150
â
isc websiteï¼www.iscsemi.com
1 isc & iscsemi is registered trademark
|
▷ |