2SA2169 Datasheet, PDF (2/3 Pages) ON Semiconductor – Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA2169
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -250mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -5A; IB= -250mA
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -100uA; IC= 0
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -1A; VCE= -2V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= -1A; VCE= -5V
MIN TYP. MAX UNIT
-0.58
V
-1.4
V
-50
V
-6
V
-10
μA
-10
μA
200
560
90
pF
130
MHz
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