2SA2169 Datasheet, PDF (1/3 Pages) ON Semiconductor – Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA2169
DESCRIPTION
·Large current capacitance
·High-speed switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·Complementary to 2SC6017
APPLICATIONS
·relay drivers,lamp drivers,motor drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃
Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
-13
A
20
W
0.95
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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