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| 2SA2121 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – Power Amplifier Applications | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA2121
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
-200
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A
VBE(on)
Base-Emitter On Voltage
IC= -8A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -200V ; IE= 0
-3.0
V
-1.5
V
-5 μ A
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-5 μ A
hFE-1
DC Current Gain
IC= -1A ; VCE= -5V
55
160
hFE-2
DC Current Gain
IC= -8A ; VCE= -5V
35
COB
Output Capacitance
IE=0 ; VCB= -10V;f= 1.0MHz
470
pF
fT
Current-GainâBandwidth Product
IC=-1A ; VCE= -5V
25
MHz
ïµ hFE-1 Classifications
R
O
55-110 80-160
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