2SA2121 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Power Amplifier Applications

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA2121
DESCRIPTION
·High Current Capability
·High Power Dissipation
·High Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -200V(Min)
·Complement to Type 2SC5949
APPLICATIONS
·Power amplifier applications
·Recommended for audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO
Collector-Base Voltage
-200
V
V_CEO
Collector-Emitter Voltage
-200
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-15
A
I_B
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-1.5
A
220
W
150
℃
-55~150 ℃
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