2SA2057 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA2057
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -375mA
ICBO
Collector Cutoff Current
VCB= -60V ; IE=0
IEBO
Emitter Cutoff Current
VEB= -6V; IC=0
hFE-1
DC Current Gain
IC= -1A; VCE= -4V
hFE-2
DC Current Gain
IC= -3A; VCE= -4V
fT
Current-Gain—Bandwidth Product
IC= -100mA ; VCE= -10V
MIN TYP. MAX UNIT
-60
V
-0.5 V
-100 μA
-1 mA
120
320
40
90
MHz
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