2SA2057 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA2057
DESCRIPTION
·High speed switching
·Low collector-emitter saturation voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power supply for audio & visual equipments such as
TVS and VCRS
·Industrial equipments such as DC-DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-3
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
-6
A
2.0
W
20
150
℃
Tstg
Storage Temperature
-55~150 ℃
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