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| 2SA1941 Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1941
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
-140
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -7.0A; IB=B -0.7A
VBE(on)
Base-Emitter On Voltage
IC= -5A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -140V ; IE=0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-2.0 V
-1.5 V
-5 μA
-5 μA
hFE-1
DC Current Gain
IC= -1A ; VCE= -5V
55
160
hFE-2
DC Current Gain
IC= -5A ; VCE= -5V
35
COB
Output Capacitance
IE=0 ; VCB= -10V;ftest= 1.0MHz
320
pF
fT
Current-GainâBandwidth Product
IC=-1A ; VCE= -5V
30
MHz
 hFE-1 Classifications
R
O
55-110 80-160
isc Websiteï¼www.iscsemi.cn
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