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| 2SA1941 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1941
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)=- 2.0V(Min) @IC=- 7A
·Good Linearity of hFE
·Complement to Type 2SC5198
APPLICATIONS
·Power amplifier applications
·Recommend for 70W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-140
V
VCEO Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-1
A
100
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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