 English |
|
|
|
|
|
|
|
| 2SA1930 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS) | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1930
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.0A; IB=- 0.1A
VBE(on) Base-Emitter Voltage
IC= -1A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -180V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V ; IC= 0
hFE-1
DC Current Gain
IC= -0.1A ; VCE= -5V
hFE-2
DC Current Gain
IC= -1A ; VCE= -5V
Cob
Collector Output Capacitance
IE= 0 ; VCB= -10V,f=1MHz
fT
Current-GainâBandwidth Product IC= -0.3A ; VCE= -5V
MIN TYP. MAX UNIT
-180
V
-1.0
V
-1.5
V
-5
μA
-5
μA
100
320
50
16
pF
200
MHz
isc websiteï¼www.iscsemi.cn
2 isc & iscsemi is registered trademark
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese