2SA1930 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·High Transition Frenquency : f_T=200MHz(Typ.)
·Complementary to 2SC5171
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
isc Product Specification
2SA1930
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-180
V
V_CEO
Collector-Emitter Voltage
-180
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-2
A
I_B
Base Current-Continuous
P_c
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-1
A
20
W
150
℃
-55~150 ℃
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