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| 2SA1357 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – TRANSISTOR (STROBE FLASH, AUDIO POWER AMPLIFIER APPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1357
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB=B -0.1A
VBE(on) Base-Emitter On Voltage
IC=-4A ; VCE= -2V
ICBO
Collector Cutoff Current
VCB= -35V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -8V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A ; VCE= -2V
hFE-2
DC Current Gain
IC= -4A ; VCE= -2V
fT
Current-GainâBandwidth Product
IC= -0.5A ; VCE= -2V
COB
Output Capacitance
IE= 0 ; VCB= -10V,ftest= 1MHz
 hFE-1 Classifications
O
Y
100-200 160-320
MIN TYP. MAX UNIT
-20
V
-1.0 V
-1.5 V
-0.1 μA
-0.1 μA
100
320
70
170
MHz
62
pF
isc Websiteï¼www.iscsemi.cn
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